Collaborative Breakthrough: Chinese and U.S. Scientists Unveil Revolutionary Graphene Semiconductor Advancement

Beijing, The Gulf Observer: A collaborative effort between Chinese and U.S. scientists has resulted in the development of a groundbreaking semiconductor featuring a graphene on-off switch, surpassing the electronic potential of silicon. Graphene, a two-dimensional carbon material, has long held promise in the electronics field, but its zero bandgap structure hindered its application in representing binary code.

Researchers from Tianjin University and the Georgia Institute of Technology achieved a breakthrough by creating a graphene on single-crystal silicon carbide (SiC) substrates with a bandgap of 0.6 eV, overcoming previous limitations. The room temperature mobilities of the developed graphene were found to be 10 times greater than silicon, as reported in a recent study published in the journal Nature.

The robust nature of graphene, coupled with its compatibility with conventional semiconductor fabrication techniques, positions it as a potential game-changer in electronic devices. The semiconductor’s development opens avenues for high-performance electronics, potentially ushering in a transformative era beyond traditional silicon-based technologies, according to Ma Lei, the corresponding author from Tianjin University.